Semiconductor Engineering

Manufacturing Bits: Sept. 3

The Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) has developed a model that reveals the nature of crystal defects in silicon carbide (SiC). Defectivity is an issue for SiC, ...
Nature

Amplified Detection of Threading Dislocations in n-Type 4H-SiC Epilayers Enabled by Time-Resolved Photoluminescence Mapping

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
Mena FN

Analysis Of Dislocation Structure In Sic Crystal By Ray Tracing Simulation Assisted By X-Ray Topological Imaging

Application importance of silicon carbide (SiC): As a wide bandgap semiconductor material, silicon carbide has attracted much attention due to its excellent electrical properties (such as larger ...
Electronic Design

SiC MOSFETs: Challenges in Transportation Electrification

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
Business Wire

Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...